Micron Announces 232-Layer 3D NAND Flash

Micron Announces 232-Layer 3D NAND Flash

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Micron on Thursday announced the industry’s first 3D NAND memory device featuring 232 layers. The company plans to use its new 232-layer 3D NAND products for a variety of products, including solid-state drives and plans to start ramping up production of such chips sometimes in late 2022. 

Micron’s 232-layer 3D NAND device features a 3D TLC architecture and has a raw capacity of 1Tb (128GB). The chip is based around Micron’s CMOS under array (CuA) architecture and uses NAND string stacking technique to build two arrays of 3D NAND on top of each other. 

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