Smasung First to GAA Node, Beating Intel, TSMC

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When Samsung announced earlier this year that it had started volume production of chips using its 3GAE (3nm-class, gate-all-around early) process technology, it never revealed what kind of components it made on its leading-edge node. As it appears, Samsung uses 3GAE to fab an application-specific integrated circuit (ASIC) for cryptocurrency mining.

Samsung 3GAE fabrication technology is the industry’s first process that relies on gate-all-around (GAA) transistors which Samsung calls MBCFETs (multi-bridge channel field-effect transistors). GAA transistor architecture reduces leakage current as the gate is now surrounded by the channel across all four sides; it also enables alteration of transistor performance and power consumption by adjusting the channel’s thickness of the channel(s). GAAFETs are particularly beneficial for high-performance and mobile applications, which is why companies like Intel and TSMC are working hard to use them in 2024 – 2025.

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